Cree, founded in 1987 and headquartered in Durham, North Carolina, is a global leader in the innovation and manufacture of semiconductor solutions for power and radio frequency (RF) applications. The company is renowned for its pioneering work in developing silicon carbide (SiC) and gallium nitride (GaN) materials, which offer superior performance, efficiency, and reliability compared to traditional silicon-based technologies. Cree's product portfolio encompasses a wide range of semiconductor devices, including SiC and GaN power semiconductors, LED (light-emitting diode) chips, LED lighting products, and RF components. These products are used in diverse applications such as power conversion, motor drives, automotive systems, telecommunications, and solid-state lighting. Cree's SiC and GaN power devices deliver higher efficiency, faster switching speeds, and increased power density, enabling significant improvements in energy efficiency and system performance across various industries. The company's LED chips and lighting products offer superior brightness, color quality, and reliability, making them ideal for use in indoor and outdoor lighting applications.
