|
APT25GR120BD15 | Microsemi | IGBT 1200V 75A 521W TO247 | - | -55°C ~ 150°C (TJ) | Tube | Through Hole | - | - | - | TO-247-3 | - |
|
STGF10NC60KD | STMicroelectronics | IGBT 600V 9A 25W TO220FP | - | -55°C ~ 150°C (TJ) | Tube | Through Hole | - | - | - | TO-220-3 Full Pack | - |
|
IRG7PH46UPBF | International Rectifier (Infineon Technologies) | IGBT 1200V 130A 469W TO247AC | - | -55°C ~ 175°C (TJ) | Tube | Through Hole | - | - | - | TO-247-3 | - |
|
SGS10N60RUFDTU | AMI Semiconductor / ON Semiconductor | IGBT 600V 16A 55W TO220F | - | -55°C ~ 150°C (TJ) | Tube | Through Hole | - | - | - | TO-220-3 Full Pack | - |
|
|
IRGS4615DPBF | International Rectifier (Infineon Technologies) | IGBT 600V 23A 99W D2PAK | - | -40°C ~ 175°C (TJ) | Tube | Surface Mount | - | - | - | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - |
|
STGW60H65F | STMicroelectronics | IGBT 650V 120A 360W TO247 | - | -55°C ~ 150°C (TJ) | Tube | Through Hole | - | - | - | TO-247-3 | - |
|
RJP4301APP-M0#T2 | Renesas Electronics America | IGBT 430V TO200FL | - | -40°C ~ 150°C (TJ) | Tube | Through Hole | - | - | - | TO-220-3 Full Pack | - |
|
IXYX100N65B3D1 | IXYS Corporation | IGBT 650V 188A 1150W PLUS247 | - | -55°C ~ 175°C (TJ) | Tube | Through Hole | - | - | - | TO-247-3 | - |
|
FGA15S125P | AMI Semiconductor / ON Semiconductor | IGBT 1250V 30A 136W TO3PN | - | -55°C ~ 175°C (TJ) | Tube | Through Hole | - | - | - | TO-3P-3, SC-65-3 | - |
|
|
IGP20N65F5XKSA1 | International Rectifier (Infineon Technologies) | IGBT TRENCH 650V 42A TO220-3 | - | -40°C ~ 175°C (TJ) | Tube | Through Hole | - | - | - | TO-220-3 | - |
Insulated Gate Bipolar Transistors (IGBTs) in single packages combine the advantages of MOSFETs and BJTs. These transistors excel in high-voltage, high-current applications, offering efficient switching and amplification capabilities. Industries such as power electronics, motor drives, and renewable energy systems benefit from the single IGBT's ability to handle robust power requirements while ensuring reliability and performance.