FJV4106RMTF

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Product Details

Part NumberFJV4106RMTF
ManufacturerAMI Semiconductor / ON Semiconductor
DescriptionTRANS PREBIAS PNP 200MW SOT23-3
DatasheetFJV4106R
CategoryDiscrete Semiconductor Products
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Transistor TypePNP - Pre-Biased
Supplier Device PackageSOT-23-3 (TO-236)
Series-
Resistor - Emitter Base (R2)47 kOhms
Resistor - Base (R1)10 kOhms
Power - Max200mW
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Frequency - Transition200MHz
Detailed DescriptionPre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 200mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce68 @ 5mA, 5V
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)100mA

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