FJV4106RMTF
Images are for reference only. See Product Specifications for product details.
Images are for reference only. See Product Specifications for product details.
Part Number | FJV4106RMTF |
Manufacturer | AMI Semiconductor / ON Semiconductor |
Description | TRANS PREBIAS PNP 200MW SOT23-3 |
Datasheet | FJV4106R |
Category | Discrete Semiconductor Products |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Transistor Type | PNP - Pre-Biased |
Supplier Device Package | SOT-23-3 (TO-236) |
Series | - |
Resistor - Emitter Base (R2) | 47 kOhms |
Resistor - Base (R1) | 10 kOhms |
Power - Max | 200mW |
Packaging | Tape & Reel (TR) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Frequency - Transition | 200MHz |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 200mW Surface Mount SOT-23-3 (TO-236) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Current - Collector (Ic) (Max) | 100mA |