
FJNS4209RBU
Images are for reference only. See Product Specifications for product details.
Images are for reference only. See Product Specifications for product details.
Part Number | FJNS4209RBU |
Manufacturer | AMI Semiconductor / ON Semiconductor |
Description | TRANS PREBIAS PNP 300MW TO92S |
Datasheet | FJNS4209R |
Category | Discrete Semiconductor Products |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
Transistor Type | PNP - Pre-Biased |
Supplier Device Package | TO-92S |
Series | - |
Resistor - Base (R1) | 4.7 kOhms |
Power - Max | 300mW |
Packaging | Bulk |
Package / Case | TO-226-3, TO-92-3 Short Body |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Frequency - Transition | 200MHz |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 40V 100mA 200MHz 300mW Through Hole TO-92S |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Current - Collector (Ic) (Max) | 100mA |