SMUN5235DW1T3G
Images are for reference only. See Product Specifications for product details.
Images are for reference only. See Product Specifications for product details.
Part Number | SMUN5235DW1T3G |
Manufacturer | AMI Semiconductor / ON Semiconductor |
Description | TRANS 2NPN PREBIAS 0.187W SOT363 |
Datasheet | MUN5235DW1, NSBC123JDxx |
Category | Discrete Semiconductor Products |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Supplier Device Package | SOT-363 |
Series | - |
Resistor - Emitter Base (R2) | 47 kOhms |
Resistor - Base (R1) | 2.2 kOhms |
Power - Max | 187mW |
Packaging | Tape & Reel (TR) |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Frequency - Transition | - |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SOT-363 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Current - Collector Cutoff (Max) | 500nA |
Current - Collector (Ic) (Max) | 100mA |