NSBC113EDXV6T1
Images are for reference only. See Product Specifications for product details.
Images are for reference only. See Product Specifications for product details.
| Part Number | NSBC113EDXV6T1 |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | TRANS 2NPN PREBIAS 0.5W SOT563 |
| Datasheet | NSBC114EDXV6Tx |
| Category | Discrete Semiconductor Products |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Supplier Device Package | SOT-563 |
| Series | - |
| Resistor - Emitter Base (R2) | 1 kOhms |
| Resistor - Base (R1) | 1 kOhms |
| Power - Max | 500mW |
| Packaging | Cut Tape (CT) |
| Package / Case | SOT-563, SOT-666 |
| Other Names | NSBC113EDXV6TOSCT |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Frequency - Transition | - |
| Detailed Description | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 3 @ 5mA, 10V |
| Current - Collector Cutoff (Max) | 500nA |
| Current - Collector (Ic) (Max) | 100mA |
| Base Part Number | NSBC1* |
