NSB13211DW6T1G
Images are for reference only. See Product Specifications for product details.
Images are for reference only. See Product Specifications for product details.
| Part Number | NSB13211DW6T1G |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | TRANS NPN/PNP PREBIAS 0.23W SC88 |
| Datasheet | NSB13211DW6T1G |
| Category | Discrete Semiconductor Products |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300ยตA, 10mA / 250mV @ 1mA, 10mA |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Series | - |
| Resistor - Emitter Base (R2) | 4.7 kOhms, 10 kOhms |
| Resistor - Base (R1) | 4.7 kOhms, 10 kOhms |
| Power - Max | 230mW |
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Frequency - Transition | - |
| Detailed Description | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 230mW Surface Mount SC-88/SC70-6/SOT-363 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V / 15 @ 5mA, 10V |
| Current - Collector Cutoff (Max) | 500nA |
| Current - Collector (Ic) (Max) | 100mA |
