MB85R4M2TFN-G-ASE1
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | MB85R4M2TFN-G-ASE1 |
| Manufacturer | Fujitsu Electronics America, Inc. |
| Description | IC FRAM 4M PARALLEL 44TSOP |
| Datasheet | View Datasheet |
| Category | Integrated Circuits (ICs) |
| Subcategory | Memory |
| Packaging | Tray |
| Access Time | 150ns |
| Memory Size | 4Mb (256K x 16) |
| Memory Type | Non-Volatile |
| Other Names | 865-1266 865-1266-1 865-1266-1-ND |
| Technology | FRAM (Ferroelectric RAM) |
| Package Case | 44-TSOP (0.400", 10.16mm Width) |
| Memory Format | FRAM |
| Mounting Type | Surface Mount |
| Voltage Supply | 1.8 V ~ 3.6 V |
| Memory Interface | Parallel |
| Detailed Description | FRAM (Ferroelectric RAM) Memory IC 4Mb (256K x 16) Parallel 150ns 44-TSOP |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Supplier Device Package | 44-TSOP |
| Write Cycle Time Word Page | 150ns |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |