• info@zenkaeurope.com
  • English
    English
    Deutsch
    Français
    Español
    Italiano
    中文
    हिन्दी
    Lietuviškai

Isolators - Gate Drivers

Isolators - Gate Drivers

  1. Products
  2. Isolators
  3. Isolators - Gate Drivers
Manufacturer
Series
Operating Temperature
Packaging
Mounting Type
RoHS Status
Manufacturer Part Number
Voltage - Supply
Shell Style

Clear Filters

Loading products…

Image Part Number Manufacturer Description Series Operating Temperature Packaging Mounting Type RoHS Status Manufacturer Part Number Voltage - Supply Output Type Shell Style
UCC21521ADWR N/A DGTL ISO 5.7KV GATE DRVR 16SOIC - -40°C ~ 125°C - - - - 6.5 V ~ 25 V - -
STGAP2SMTR STMicroelectronics DGTL ISO - -40°C ~ 125°C (TJ) Tape & Reel (TR) Surface Mount - - 3 V ~ 5.5 V - -
TLP350H(F) Toshiba Semiconductor and Storage X36 PB-F PHOTOCOUPLER THRU HOLE - -40°C ~ 125°C - - - - 15 V ~ 30 V - -
1EDI10I12MHXUMA1 International Rectifier (Infineon Technologies) IC IGBT DVR 1200V 8DSO EiceDriver™ -40°C ~ 150°C (TJ) Tape & Reel (TR) Surface Mount - - 13 V ~ 18 V - -
SI82394AB4-IS1 Energy Micro (Silicon Labs) DGTL ISO 2.5KV GATE DVR 16SOIC Automotive, AEC-Q100 -40°C ~ 125°C Tube Surface Mount - - 6.5 V ~ 24 V - -
VO3150A-X007T Vishay / Semiconductor - Opto Division OPTOISO 5.3KV 1CH GATE DRVR 8SMD - -40°C ~ 110°C Tape & Reel (TR) Surface Mount - - 15 V ~ 32 V - -
SI8233BB-D-IS Energy Micro (Silicon Labs) DGTL ISO 2.5KV GATE DRVR 16SOIC Automotive, AEC-Q100 -40°C ~ 125°C Tube Surface Mount - - 9.4 V ~ 24 V - -
HCPL-3120 Avago Technologies (Broadcom Limited) OPTOISO 3.75KV 1CH GATE DVR 8DIP - -40°C ~ 100°C Tube Through Hole - - 15 V ~ 30 V - -
SI8233BD-C-IS Energy Micro (Silicon Labs) DGTL ISO 5KV 2CH GATE DVR 16SOIC Automotive, AEC-Q100 -40°C ~ 125°C Tube Surface Mount - - 9.4 V ~ 24 V - -
SI8235AB-D-IMR Energy Micro (Silicon Labs) DGTL ISO 2.5KV GATE DRIVER 14LGA Automotive, AEC-Q100 -40°C ~ 125°C Tape & Reel (TR) Surface Mount - - 6.5 V ~ 24 V - -

About Isolators - Gate Drivers


Gate driver isolators are devices designed to provide electrical isolation and drive capability for power semiconductor devices such as MOSFETs, IGBTs, and SiC/GaN FETs. They ensure safe and reliable switching of power electronics by isolating the control signals from the high-voltage and high-current portions of the circuit, protecting sensitive control circuitry from voltage transients and noise.