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| Image | Part Number | Manufacturer | Description | Series | Operating Temperature | Packaging | Mounting Type | RoHS Status | Manufacturer Part Number | Voltage - Supply | Output Type | Shell Style |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI8283BD-IS | 4D Systems | OPTOISI 5KV GATE DRIVER 24SOIC | - | -40°C ~ 125°C | - | Surface Mount | Tube | SI8283BD-IS | - | - | 9.5 V ~ 30 V | |
| SI8230AB-B-ISR | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DRVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 6.5 V ~ 24 V | - | - | |
| PS9531L1-V-AX | CEL (California Eastern Laboratories) | OPTOISO 5KV 1CH GATE DRIVER 8DIP | - | -40°C ~ 125°C | Tube | Through Hole | - | - | 15 V ~ 30 V | - | - | |
| HCPL-3180 | Avago Technologies (Broadcom Limited) | OPTOISO 3.75KV 1CH GATE DVR 8DIP | - | -40°C ~ 125°C | Tube | Through Hole | - | - | 10 V ~ 20 V | - | - | |
| SI82394AD-IS | Energy Micro (Silicon Labs) | DGTL ISO 5KV 2CH GATE DVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tube | Surface Mount | - | - | 6.5 V ~ 24 V | - | - | |
| HCPL-3150#360 | Avago Technologies (Broadcom Limited) | OPTOISO 3.75KV GATE DRVR 8DIP GW | - | -40°C ~ 100°C | Tube | Surface Mount | - | - | 15 V ~ 30 V | - | - | |
| ACPL-P302-500E | Avago Technologies (Broadcom Limited) | OPTOISO 3.75KV 1CH GATE DRVR 6SO | - | -40°C ~ 100°C | Cut Tape (CT) | Surface Mount | - | - | 10 V ~ 30 V | - | - | |
| SI8282CC-ISR | Energy Micro (Silicon Labs) | DGTL ISO 3.75KV 1CH GATE DRVR | Automotive, AEC-Q100 | -40°C ~ 125°C | Tape & Reel (TR) | Surface Mount | - | - | 2.8 V ~ 5.5 V | - | - | |
| ACPL-J313-000E | Avago Technologies (Broadcom Limited) | OPTOISO 3.75KV 1CH GATE DVR 8DIP | - | -40°C ~ 100°C | Tube | Through Hole | - | - | 15 V ~ 30 V | - | - | |
| SI82396AB-IS1 | Energy Micro (Silicon Labs) | DGTL ISO 2.5KV GATE DVR 16SOIC | Automotive, AEC-Q100 | -40°C ~ 125°C | Tube | Surface Mount | - | - | 6.5 V ~ 24 V | - | - |
Gate driver isolators are devices designed to provide electrical isolation and drive capability for power semiconductor devices such as MOSFETs, IGBTs, and SiC/GaN FETs. They ensure safe and reliable switching of power electronics by isolating the control signals from the high-voltage and high-current portions of the circuit, protecting sensitive control circuitry from voltage transients and noise.