DG636EN-T1-E4
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | DG636EN-T1-E4 |
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | IC SWITCH DUAL SPDT 16-MINIQFN |
| Datasheet | View Datasheet |
| Category | Integrated Circuits (ICs) |
| Subcategory | Interface - Analog Switches, Multiplexers, Demultiplexers |
| Crosstalk | -88dB @ 10MHz |
| Packaging | Tape & Reel (TR) |
| Other Names | DG636EN-T1-E4TR DG636ENT1E4 |
| Package Case | 16-WFQFN |
| 3Db Bandwidth | 610MHz |
| Switch Circuit | SPDT |
| Base Part Number | DG636 |
| Charge Injection | 0.1pC |
| Numberof Circuits | 2 |
| Voltage Supply Dual V | ±2.7 V ~ 5 V |
| Detailed Description | 2 Circuit IC Switch 2:1 115 Ohm 16-miniQFN (1.8x2.6) |
| On State Resistance Max | 115 Ohm |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Switch Time Ton Toff Max | 60ns, 52ns |
| Voltage Supply Single V | 2.7 V ~ 12 V |
| Supplier Device Package | 16-miniQFN (1.8x2.6) |
| Current Leakage I Soff Max | 100pA |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Channelto Channel Matching Ron | 1 Ohm |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Channel Capacitance C Soff C Doff | 2.1pF, 4.2pF |
| Multiplexer Demultiplexer Circuit | 2:1 |