2SK3666-2-TB-E
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | 2SK3666-2-TB-E |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | JFET NCH 30V 200MW 3CP |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - JFETs |
| F E T Type | N-Channel |
| Power Max | 200mW |
| Packaging | Tape & Reel (TR) |
| Other Names | 2SK3666-2-TB-E-ND 2SK3666-2-TB-EOSTR |
| Package Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Base Part Number | 2SK3666 |
| Resistance R D S On | 200 Ohms |
| Current Drain Id Max | 10mA |
| Detailed Description | JFET N-Channel 10mA 200mW Surface Mount 3-CP |
| Operating Temperature | 150°C (TJ) |
| Supplier Device Package | 3-CP |
| Voltage Cutoff V G Soff Id | 180mV @ 1µA |
| Current Drain Idss Vds Vgs0 | 600µA @ 10V |
| Drainto Source Voltage Vdss | 30V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 4pF @ 10V |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |