RGTH00TS65GC11
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | RGTH00TS65GC11 |
| Manufacturer | LAPIS Semiconductor |
| Description | IGBT 650V 85A 277W TO-247N |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - IGBTs - Single |
| I G B T Type | Trench Field Stop |
| Power Max | 277W |
| Input Type | Standard |
| Packaging | Tube |
| Gate Charge | 94nC |
| Tdonoff25 C | 39ns/143ns |
| Package Case | TO-247-3 |
| Mounting Type | Through Hole |
| Test Condition | 400V, 50A, 10 Ohm, 15V |
| Vceon Max Vge Ic | 2.1V @ 15V, 50A |
| Detailed Description | IGBT Trench Field Stop 650V 85A 277W Through Hole TO-247N |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Current Collector Ic Max | 85A |
| Supplier Device Package | TO-247N |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Pulsed Icm | 200A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 650V |