NGTD21T65F2WP
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | NGTD21T65F2WP |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | IGBT TRENCH FIELD STOP 650V DIE |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - IGBTs - Single |
| I G B T Type | Trench Field Stop |
| Input Type | Standard |
| Packaging | Bulk |
| Package Case | Die |
| Mounting Type | Surface Mount |
| Vceon Max Vge Ic | 1.9V @ 15V, 45A |
| Detailed Description | IGBT Trench Field Stop 650V Surface Mount Die |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Supplier Device Package | Die |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Pulsed Icm | 200A |
| Voltage Collector Emitter Breakdown Max | 650V |