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Product Image
IXYP20N65C3D1

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number IXYP20N65C3D1
Manufacturer IXYS Corporation
Description IGBT 650V 18A 50W TO220
Category Discrete Semiconductor Products
Subcategory Transistors - IGBTs - Single
Series GenX3™, XPT™
I G B T Type PT
Power Max 200W
Input Type Standard
Packaging Tube
Gate Charge 30nC
Tdonoff25 C 19ns/80ns
Package Case TO-220-3
Mounting Type Through Hole
Test Condition 400V, 20A, 20 Ohm, 15V
Vceon Max Vge Ic 2.5V @ 15V, 20A
Switching Energy 430µJ (on), 350µJ (off)
Detailed Description IGBT PT 650V 50A 200W Through Hole TO-220AB
Operating Temperature -55°C ~ 175°C (TJ)
Current Collector Ic Max 50A
Supplier Device Package TO-220AB
Reverse Recovery Timetrr 135ns
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Pulsed Icm 105A
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 650V

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