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Manufacturer Image
HGTP5N120BND

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number HGTP5N120BND
Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 1200V 21A 167W TO220AB
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - IGBTs - Single
I G B T Type NPT
Power Max 167W
Input Type Standard
Packaging Tube
Gate Charge 53nC
Tdonoff25 C 22ns/160ns
Package Case TO-220-3
Mounting Type Through Hole
Test Condition 960V, 5A, 25 Ohm, 15V
Vceon Max Vge Ic 2.7V @ 15V, 5A
Switching Energy 450µJ (on), 390µJ (off)
Detailed Description 323887
Operating Temperature -55°C ~ 150°C (TJ)
Current Collector Ic Max 21A
Supplier Device Package TO-220AB
Reverse Recovery Timetrr 65ns
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Pulsed Icm 40A
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 1200V

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