HGTG10N120BND
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | HGTG10N120BND |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | IGBT 1200V 35A 298W TO247 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - IGBTs - Single |
| I G B T Type | NPT |
| Power Max | 298W |
| Input Type | Standard |
| Packaging | Tube |
| Gate Charge | 100nC |
| Tdonoff25 C | 23ns/165ns |
| Package Case | TO-247-3 |
| Mounting Type | Through Hole |
| Test Condition | 960V, 10A, 10 Ohm, 15V |
| Vceon Max Vge Ic | 2.7V @ 15V, 10A |
| Switching Energy | 850µJ (on), 800µJ (off) |
| Detailed Description | IGBT NPT 1200V 35A 298W Through Hole TO-247 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Current Collector Ic Max | 35A |
| Supplier Device Package | TO-247 |
| Reverse Recovery Timetrr | 70ns |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Pulsed Icm | 80A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 1200V |