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Manufacturer Image
HGTD3N60C3S9A

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number HGTD3N60C3S9A
Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 600V 6A 33W TO252AA
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - IGBTs - Single
Power Max 33W
Input Type Standard
Packaging Tape & Reel (TR)
Gate Charge 10.8nC
Package Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Test Condition 480V, 3A, 82 Ohm, 15V
Vceon Max Vge Ic 2V @ 15V, 3A
Switching Energy 85µJ (on), 245µJ (off)
Detailed Description 323129
Operating Temperature -40°C ~ 150°C (TJ)
Current Collector Ic Max 6A
Supplier Device Package TO-252AA
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Pulsed Icm 24A
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 600V

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