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Manufacturer Image
HGTD1N120BNS9A

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number HGTD1N120BNS9A
Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 1200V 5.3A 60W TO252AA
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - IGBTs - Single
I G B T Type NPT
Power Max 60W
Input Type Standard
Packaging Original-Reel®
Gate Charge 14nC
Other Names HGTD1N120BNS9ADKR
Tdonoff25 C 15ns/67ns
Package Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Test Condition 960V, 1A, 82 Ohm, 15V
Vceon Max Vge Ic 2.9V @ 15V, 1A
Base Part Number HGTD1N120
Switching Energy 70µJ (on), 90µJ (off)
Detailed Description 336774
Operating Temperature -55°C ~ 150°C (TJ)
Current Collector Ic Max 5.3A
Supplier Device Package TO-252AA
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Pulsed Icm 6A
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 1200V

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