HGTD1N120BNS9A
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | HGTD1N120BNS9A |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | IGBT 1200V 5.3A 60W TO252AA |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - IGBTs - Single |
| I G B T Type | NPT |
| Power Max | 60W |
| Input Type | Standard |
| Packaging | Original-Reel® |
| Gate Charge | 14nC |
| Other Names | HGTD1N120BNS9ADKR |
| Tdonoff25 C | 15ns/67ns |
| Package Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Test Condition | 960V, 1A, 82 Ohm, 15V |
| Vceon Max Vge Ic | 2.9V @ 15V, 1A |
| Base Part Number | HGTD1N120 |
| Switching Energy | 70µJ (on), 90µJ (off) |
| Detailed Description | IGBT NPT 1200V 5.3A 60W Surface Mount TO-252AA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Current Collector Ic Max | 5.3A |
| Supplier Device Package | TO-252AA |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Pulsed Icm | 6A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 1200V |