HGT1S12N60A4DS
Images are for reference only. See Product Specifications for product details.
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Images are for reference only. See Product Specifications for product details.
| Part Number | HGT1S12N60A4DS |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | IGBT 600V 54A 167W D2PAK |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - IGBTs - Single |
| Power Max | 167W |
| Input Type | Standard |
| Packaging | Tube |
| Gate Charge | 78nC |
| Tdonoff25 C | 17ns/96ns |
| Package Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Test Condition | 390V, 12A, 10 Ohm, 15V |
| Vceon Max Vge Ic | 2.7V @ 15V, 12A |
| Base Part Number | HGT1S12N60 |
| Switching Energy | 55µJ (on), 50µJ (off) |
| Detailed Description | 321074 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Current Collector Ic Max | 54A |
| Supplier Device Package | TO-263AB |
| Reverse Recovery Timetrr | 30ns |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Pulsed Icm | 96A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 600V |