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Product Image
HGT1S10N120BNS

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number HGT1S10N120BNS
Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 1200V 35A 298W TO263AB
Category Discrete Semiconductor Products
Subcategory Transistors - IGBTs - Single
I G B T Type NPT
Power Max 298W
Input Type Standard
Packaging Tube
Gate Charge 100nC
Other Names HGT1S10N120BNS-ND HGT1S10N120BNSFS
Tdonoff25 C 23ns/165ns
Package Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Test Condition 960V, 10A, 10 Ohm, 15V
Vceon Max Vge Ic 2.7V @ 15V, 10A
Base Part Number HGT1S10N120
Switching Energy 320µJ (on), 800µJ (off)
Detailed Description 324069
Operating Temperature -55°C ~ 150°C (TJ)
Current Collector Ic Max 35A
Supplier Device Package TO-263AB
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Pulsed Icm 80A
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 1200V

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