FGH60T65SQD-F155
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | FGH60T65SQD-F155 |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | 650V 60A FS4 TRENCH IGBT |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - IGBTs - Single |
| I G B T Type | Trench Field Stop |
| Power Max | 333W |
| Input Type | Standard |
| Gate Charge | 79nC |
| Other Names | FGH60T65SQD-F155-ND FGH60T65SQD-F155OS |
| Tdonoff25 C | 20.8ns/102ns |
| Package Case | TO-247-3 |
| Mounting Type | Through Hole |
| Test Condition | 400V, 15A, 4.7 Ohm, 15V |
| Vceon Max Vge Ic | 2.1V @ 15V, 60A |
| Lead Free Status | Lead free |
| Switching Energy | 227µJ (on), 100µJ (off) |
| Detailed Description | IGBT Trench Field Stop 650V 120A 333W Through Hole TO-247-3 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Current Collector Ic Max | 120A |
| Supplier Device Package | TO-247-3 |
| Reverse Recovery Timetrr | 34.6ns |
| Current Collector Pulsed Icm | 240A |
| Moisture Sensitivity Level M S L | Not Applicable |
| Voltage Collector Emitter Breakdown Max | 650V |