FGH50T65SQD-F155
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | FGH50T65SQD-F155 |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | 650V FS4 TRENCH IGBT |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - IGBTs - Single |
| I G B T Type | Trench Field Stop |
| Power Max | 268W |
| Input Type | Standard |
| Gate Charge | 99nC |
| Other Names | FGH50T65SQD-F155-ND FGH50T65SQD-F155OS FGH50T65SQD_F155 FGH50T65SQD_F155-ND |
| Tdonoff25 C | 22ns/105ns |
| Package Case | TO-247-3 |
| Mounting Type | Through Hole |
| Test Condition | 400V, 12.5A, 4.7 Ohm, 15V |
| Vceon Max Vge Ic | 2.1V @ 15V, 50A |
| Switching Energy | 180µJ (on), 45µJ (off) |
| Detailed Description | IGBT Trench Field Stop 650V 100A 268W Through Hole TO-247-3 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Current Collector Ic Max | 100A |
| Supplier Device Package | TO-247-3 |
| Reverse Recovery Timetrr | 31ns |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Pulsed Icm | 200A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 650V |