FGH50T65SQD-F155
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
English
English
Deutsch
Français
Español
Italiano
中文
हिन्दी
Lietuviškai
Images are for reference only. See Product Specifications for product details.
| Part Number | FGH50T65SQD-F155 |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | 650V FS4 TRENCH IGBT |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - IGBTs - Single |
| I G B T Type | Trench Field Stop |
| Power Max | 268W |
| Input Type | Standard |
| Gate Charge | 99nC |
| Other Names | FGH50T65SQD-F155-ND FGH50T65SQD-F155OS FGH50T65SQD_F155 FGH50T65SQD_F155-ND |
| Tdonoff25 C | 22ns/105ns |
| Package Case | TO-247-3 |
| Mounting Type | Through Hole |
| Test Condition | 400V, 12.5A, 4.7 Ohm, 15V |
| Vceon Max Vge Ic | 2.1V @ 15V, 50A |
| Switching Energy | 180µJ (on), 45µJ (off) |
| Detailed Description | 336003 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Current Collector Ic Max | 100A |
| Supplier Device Package | TO-247-3 |
| Reverse Recovery Timetrr | 31ns |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Pulsed Icm | 200A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 650V |