FGA6540WDF
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | FGA6540WDF |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | IGBT 650V 80A 238W TO-3PN |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - IGBTs - Single |
| I G B T Type | Trench Field Stop |
| Power Max | 238W |
| Input Type | Standard |
| Packaging | Tube |
| Gate Charge | 55.5nC |
| Tdonoff25 C | 16.8ns/54.4ns |
| Package Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Test Condition | 400V, 40A, 6 Ohm, 15V |
| Vceon Max Vge Ic | 2.3V @ 15V, 40A |
| Switching Energy | 1.37mJ (on), 250µJ (off) |
| Detailed Description | IGBT Trench Field Stop 650V 80A 238W Through Hole TO-3PN |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Current Collector Ic Max | 80A |
| Supplier Device Package | TO-3PN |
| Reverse Recovery Timetrr | 101ns |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Pulsed Icm | 120A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 650V |