FGA30T65SHD
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | FGA30T65SHD |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | IGBT 650V 60A 238W TO-3PN |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - IGBTs - Single |
| I G B T Type | Trench Field Stop |
| Power Max | 238W |
| Input Type | Standard |
| Packaging | Tube |
| Gate Charge | 54.7nC |
| Tdonoff25 C | 14.4ns/52.8ns |
| Package Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Test Condition | 400V, 30A, 6 Ohm, 15V |
| Vceon Max Vge Ic | 2.1V @ 15V, 30A |
| Switching Energy | 598µJ (on), 167µJ (off) |
| Detailed Description | IGBT Trench Field Stop 650V 60A 238W Through Hole TO-3PN |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Current Collector Ic Max | 60A |
| Supplier Device Package | TO-3PN |
| Reverse Recovery Timetrr | 31.8ns |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Pulsed Icm | 90A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 650V |