APT70GR65B2SCD30
Images are for reference only. See Product Specifications for product details.
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Images are for reference only. See Product Specifications for product details.
| Part Number | APT70GR65B2SCD30 |
| Manufacturer | Microsemi |
| Description | INSULATED GATE BIPOLAR TRANSISTO |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - IGBTs - Single |
| I G B T Type | NPT |
| Power Max | 595W |
| Packaging | Bulk |
| Gate Charge | 305nC |
| Tdonoff25 C | 19ns/170ns |
| Package Case | TO-247-3 |
| Mounting Type | Through Hole |
| Test Condition | 433V, 70A, 4.3 Ohm, 15V |
| Vceon Max Vge Ic | 2.4V @ 15V, 70A |
| Detailed Description | IGBT NPT 650V 134A 595W Through Hole T-MAX™ [B2] |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Current Collector Ic Max | 134A |
| Supplier Device Package | T-MAX™ [B2] |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Pulsed Icm | 260A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 650V |