APT65GP60L2DQ2G
Images are for reference only. See Product Specifications for product details.
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Images are for reference only. See Product Specifications for product details.
| Part Number | APT65GP60L2DQ2G |
| Manufacturer | Microsemi |
| Description | IGBT 600V 198A 833W TO264 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - IGBTs - Single |
| Series | POWER MOS 7® |
| I G B T Type | PT |
| Power Max | 833W |
| Input Type | Standard |
| Packaging | Tube |
| Gate Charge | 210nC |
| Other Names | APT65GP60L2DQ2GMI APT65GP60L2DQ2GMI-ND |
| Tdonoff25 C | 30ns/90ns |
| Package Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Test Condition | 400V, 65A, 5 Ohm, 15V |
| Vceon Max Vge Ic | 2.7V @ 15V, 65A |
| Switching Energy | 605µJ (on), 895µJ (off) |
| Detailed Description | IGBT PT 600V 198A 833W Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Current Collector Ic Max | 198A |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Pulsed Icm | 250A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 600V |