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Product Image
APT50GP60B2DQ2G

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number APT50GP60B2DQ2G
Manufacturer Microsemi
Description IGBT 600V 150A 625W TMAX
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - IGBTs - Single
Series POWER MOS 7®
I G B T Type PT
Power Max 625W
Input Type Standard
Packaging Tube
Gate Charge 165nC
Other Names APT50GP60B2DQ2GMI APT50GP60B2DQ2GMI-ND
Tdonoff25 C 19ns/85ns
Package Case TO-247-3 Variant
Mounting Type Through Hole
Test Condition 400V, 50A, 4.3 Ohm, 15V
Vceon Max Vge Ic 2.7V @ 15V, 50A
Switching Energy 465µJ (on), 635µJ (off)
Detailed Description IGBT PT 600V 150A 625W Through Hole
Operating Temperature -55°C ~ 150°C (TJ)
Current Collector Ic Max 150A
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Pulsed Icm 190A
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 600V

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