APT45GR65BSCD10
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
English
English
Deutsch
Français
Español
Italiano
中文
हिन्दी
Lietuviškai
Images are for reference only. See Product Specifications for product details.
| Part Number | APT45GR65BSCD10 |
| Manufacturer | Microsemi |
| Description | INSULATED GATE BIPOLAR TRANSISTO |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - IGBTs - Single |
| I G B T Type | NPT |
| Power Max | 543W |
| Input Type | Standard |
| Packaging | Bulk |
| Gate Charge | 203nC |
| Tdonoff25 C | 15ns/100ns |
| Package Case | TO-247-3 |
| Mounting Type | Through Hole |
| Test Condition | 433V, 45A, 4.3 Ohm, 15V |
| Vceon Max Vge Ic | 2.4V @ 15V, 45A |
| Detailed Description | IGBT NPT 650V 118A 543W Through Hole TO-247 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Current Collector Ic Max | 118A |
| Supplier Device Package | TO-247 |
| Reverse Recovery Timetrr | 80ns |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Current Collector Pulsed Icm | 224A |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Voltage Collector Emitter Breakdown Max | 650V |