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Product Image
APT45GP120B2DQ2G

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number APT45GP120B2DQ2G
Manufacturer Microsemi
Description IGBT 1200V 113A 625W TMAX
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - IGBTs - Single
Series POWER MOS 7®
I G B T Type PT
Power Max 625W
Input Type Standard
Packaging Tube
Gate Charge 185nC
Other Names APT45GP120B2DQ2GMI APT45GP120B2DQ2GMI-ND
Tdonoff25 C 18ns/100ns
Package Case TO-247-3 Variant
Mounting Type Through Hole
Test Condition 600V, 45A, 5 Ohm, 15V
Vceon Max Vge Ic 3.9V @ 15V, 45A
Switching Energy 900µJ (on), 905µJ (off)
Detailed Description IGBT PT 1200V 113A 625W Through Hole
Operating Temperature -55°C ~ 150°C (TJ)
Current Collector Ic Max 113A
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Pulsed Icm 170A
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 1200V

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