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Product Image
APT25GN120B2DQ2G

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number APT25GN120B2DQ2G
Manufacturer Microsemi
Description IGBT 1200V 67A 272W TMAX
Category Discrete Semiconductor Products
Subcategory Transistors - IGBTs - Single
I G B T Type NPT, Trench Field Stop
Power Max 272W
Input Type Standard
Packaging Tube
Gate Charge 155nC
Other Names APT25GN120B2DQ2GMI APT25GN120B2DQ2GMI-ND
Tdonoff25 C 22ns/280ns
Package Case TO-247-3 Variant
Mounting Type Through Hole
Test Condition 800V, 25A, 4.3 Ohm, 15V
Vceon Max Vge Ic 2.1V @ 15V, 25A
Switching Energy 2.15µJ (off)
Detailed Description IGBT NPT, Trench Field Stop 1200V 67A 272W Through Hole
Operating Temperature -55°C ~ 150°C (TJ)
Current Collector Ic Max 67A
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Current Collector Pulsed Icm 75A
Moisture Sensitivity Level M S L 1 (Unlimited)
Voltage Collector Emitter Breakdown Max 1200V

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