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GSID600A120S4B1

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Product Details

Part Number GSID600A120S4B1
Manufacturer Global Power Technologies Group
Description SILICON IGBT MODULES
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - IGBTs - Modules
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Voltage Collector Emitter Breakdown Max 1200V
Vceon Max Vge Ic 2.1V @ 15V, 600A
Supplier Device Package Module
Series Amp+â„¢
Power Max 3060W
Package Case Module
Operating Temperature -40°C ~ 150°C
N T C Thermistor Yes
Mounting Type Chassis Mount
Input Capacitance Cies Vce 51nF @ 25V
Input Standard
Detailed Description IGBT Module Half Bridge 1200V 1130A 3060W Chassis Mount Module
Current Collector Cutoff Max 1mA
Current Collector Ic Max 1130A
Configuration Half Bridge

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