TSM80N1R2CP ROG
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | TSM80N1R2CP ROG |
| Manufacturer | TSC (Taiwan Semiconductor) |
| Description | MOSFET N-CH 800V 5.5A TO252 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Vgs Max | ±30V |
| F E T Type | N-Channel |
| Packaging | Cut Tape (CT) |
| Other Names | TSM80N1R2CP ROGCT TSM80N1R2CP ROGCT-ND TSM80N1R2CPROGCT |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 4V @ 250µA |
| Package Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 1.2 Ohm @ 2.75A, 10V |
| Gate Charge Qg Max Vgs | 19.4nC @ 10V |
| Detailed Description | N-Channel 800V 5.5A (Tc) 110W (Tc) Surface Mount TO-252, (D-Pak) |
| Power Dissipation Max | 110W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | TO-252, (D-Pak) |
| Drainto Source Voltage Vdss | 800V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 685pF @ 100V |
| Current Continuous Drain Id25 C | 5.5A (Tc) |
| Moisture Sensitivity Level M S L | 3 (168 Hours) |
| Drive Voltage Max Rds On Min Rds On | 10V |