TSM60NB099PW C1G
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | TSM60NB099PW C1G |
| Manufacturer | TSC (Taiwan Semiconductor) |
| Description | MOSFET N-CHANNEL 600V 38A TO247 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Vgs Max | ±30V |
| F E T Type | N-Channel |
| Other Names | TSM60NB099PW C1G-ND TSM60NB099PWC1G |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 4V @ 250µA |
| Package Case | TO-247-3 |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 99 mOhm @ 11.7A, 10V |
| Gate Charge Qg Max Vgs | 62nC @ 10V |
| Detailed Description | N-Channel 600V 38A (Tc) 329W (Tc) Through Hole TO-247 |
| Power Dissipation Max | 329W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Supplier Device Package | TO-247 |
| Drainto Source Voltage Vdss | 600V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 2587pF @ 100V |
| Current Continuous Drain Id25 C | 38A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 10V |