TPN4R712MD,L1Q
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | TPN4R712MD,L1Q |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | MOSFET P-CH 20V 36A 8TSON ADV |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | U-MOSVI |
| Vgs Max | ±12V |
| F E T Type | P-Channel |
| Packaging | Tape & Reel (TR) |
| Other Names | TPN4R712MD,L1Q(M TPN4R712MDL1QTR |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 1.2V @ 1mA |
| Package Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 4.7 mOhm @ 18A, 4.5V |
| Gate Charge Qg Max Vgs | 65nC @ 5V |
| Detailed Description | P-Channel 20V 36A (Tc) 42W (Tc) Surface Mount 8-TSON Advance (3.3x3.3) |
| Power Dissipation Max | 42W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) |
| Drainto Source Voltage Vdss | 20V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 4300pF @ 10V |
| Current Continuous Drain Id25 C | 36A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 2.5V, 4.5V |