TPN2R805PL,L1Q
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| Part Number | TPN2R805PL,L1Q |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | X35 PB-F POWER MOSFET TRANSISTOR |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | U-MOSIX-H |
| Vgs Max | ±20V |
| F E T Type | N-Channel |
| Other Names | TPN2R805PLL1Q |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 2.4V @ 300µA |
| Package Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 2.8 mOhm @ 40A, 10V |
| Gate Charge Qg Max Vgs | 39nC @ 10V |
| Detailed Description | N-Channel 45V 139A (Ta), 80A (Tc) 2.67W (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.3x3.3) |
| Operating Temperature | 175°C |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) |
| Drainto Source Voltage Vdss | 45V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 3.2nF @ 22.5V |
| Current Continuous Drain Id25 C | 139A (Ta), 80A (Tc) |
| Drive Voltage Max Rds On Min Rds On | 4.5V, 10V |