TPN2R503NC,L1Q
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | TPN2R503NC,L1Q |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | MOSFET N CH 30V 40A 8TSON-ADV |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | U-MOSVIII |
| Vgs Max | ±20V |
| F E T Type | N-Channel |
| Packaging | Tape & Reel (TR) |
| Other Names | TPN2R503NC,L1Q(M TPN2R503NCL1Q TPN2R503NCL1QTR |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 2.3V @ 500µA |
| Package Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 2.5 mOhm @ 20A, 10V |
| Gate Charge Qg Max Vgs | 40nC @ 10V |
| Detailed Description | N-Channel 30V 40A (Ta) 700mW (Ta), 35W (Tc) Surface Mount 8-TSON Advance (3.3x3.3) |
| Operating Temperature | 150°C (TJ) |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) |
| Drainto Source Voltage Vdss | 30V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 2230pF @ 15V |
| Current Continuous Drain Id25 C | 40A (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 4.5V, 10V |