TPN1110ENH,L1Q
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | TPN1110ENH,L1Q |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | MOSFET N-CH 200V 7.2A 8TSON |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | U-MOSVIII-H |
| Vgs Max | ±20V |
| F E T Type | N-Channel |
| Packaging | Tape & Reel (TR) |
| Other Names | TPN1110ENH,L1Q(M TPN1110ENHL1QTR |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 4V @ 200µA |
| Package Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 114 mOhm @ 3.6A, 10V |
| Gate Charge Qg Max Vgs | 7nC @ 10V |
| Detailed Description | N-Channel 200V 7.2A (Ta) 700mW (Ta), 39W (Tc) Surface Mount 8-TSON Advance (3.3x3.3) |
| Power Dissipation Max | 700mW (Ta), 39W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) |
| Drainto Source Voltage Vdss | 200V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 600pF @ 100V |
| Current Continuous Drain Id25 C | 7.2A (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 10V |