TPN11006NL,LQ
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | TPN11006NL,LQ |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | MOSFET N-CH 60V 17A 8TSON |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | U-MOSVIII-H |
| Vgs Max | ±20V |
| F E T Type | N-Channel |
| Packaging | Original-Reel® |
| Other Names | TPN11006NLLQDKR |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 2.5V @ 200µA |
| Package Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 11.4 mOhm @ 8.5A, 10V |
| Gate Charge Qg Max Vgs | 23nC @ 10V |
| Detailed Description | N-Channel 60V 17A (Tc) 700mW (Ta), 30W (Tc) Surface Mount 8-TSON Advance (3.3x3.3) |
| Power Dissipation Max | 700mW (Ta), 30W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) |
| Drainto Source Voltage Vdss | 60V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 2000pF @ 30V |
| Current Continuous Drain Id25 C | 17A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 4.5V, 10V |