TPH2900ENH,L1Q
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | TPH2900ENH,L1Q |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | MOSFET N-CH 200V 33A SOP8 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | U-MOSVIII-H |
| Vgs Max | ±20V |
| F E T Type | N-Channel |
| Packaging | Tape & Reel (TR) |
| Other Names | TPH2900ENH,L1Q(M TPH2900ENHL1QTR |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 4V @ 1mA |
| Package Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 29 mOhm @ 16.5A, 10V |
| Gate Charge Qg Max Vgs | 22nC @ 10V |
| Detailed Description | N-Channel 200V 33A (Ta) 78W (Tc) Surface Mount 8-SOP Advance (5x5) |
| Power Dissipation Max | 78W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Drainto Source Voltage Vdss | 200V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 2200pF @ 100V |
| Current Continuous Drain Id25 C | 33A (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 10V |