TPCF8101(TE85L,F,M
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | TPCF8101(TE85L,F,M |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | MOSFET P-CH 12V 6A VS-8 |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | U-MOSIII |
| Vgs Max | ±8V |
| F E T Type | P-Channel |
| Packaging | Cut Tape (CT) |
| Other Names | TPCF8101(TE85LFMCT TPCF8101FCT TPCF8101FCT-ND |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 1.2V @ 200µA |
| Package Case | 8-SMD, Flat Lead |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 28 mOhm @ 3A, 4.5V |
| Gate Charge Qg Max Vgs | 18nC @ 5V |
| Detailed Description | P-Channel 12V 6A (Ta) 700mW (Ta) Surface Mount VS-8 (2.9x1.5) |
| Power Dissipation Max | 700mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Supplier Device Package | VS-8 (2.9x1.5) |
| Drainto Source Voltage Vdss | 12V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 1600pF @ 10V |
| Current Continuous Drain Id25 C | 6A (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 1.8V, 4.5V |