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TP65H050WS

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Product Details

Part Number TP65H050WS
Manufacturer Transphorm
Description 650 V 34 A CASCODE GAN FET
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Vgsth Max Id 4.8V @ 700µA
Technology GaNFET (Gallium Nitride)
Supplier Device Package TO-247-3
Rds On Max Id Vgs 60 mOhm @ 22A, 10V
Power Dissipation Max 119W (Tc)
Package Case TO-247-3
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Moisture Sensitivity Level M S L 3 (168 Hours)
F E T Type N-Channel
Detailed Description N-Channel 650V 34A (Tc) 119W (Tc) Through Hole TO-247-3
Current Continuous Drain Id25 C 34A (Tc)
Vgs Max ±20V
Input Capacitance Ciss Max Vds 1000pF @ 400V
Gate Charge Qg Max Vgs 24nC @ 10V
Drive Voltage Max Rds On Min Rds On 10V
Drainto Source Voltage Vdss 650V

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