TP65H050WS
Images are for reference only. See Product Specifications for product details.
Images are for reference only. See Product Specifications for product details.
| Part Number | TP65H050WS |
| Manufacturer | Transphorm |
| Description | 650 V 34 A CASCODE GAN FET |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Vgsth Max Id | 4.8V @ 700µA |
| Technology | GaNFET (Gallium Nitride) |
| Supplier Device Package | TO-247-3 |
| Rds On Max Id Vgs | 60 mOhm @ 22A, 10V |
| Power Dissipation Max | 119W (Tc) |
| Package Case | TO-247-3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level M S L | 3 (168 Hours) |
| F E T Type | N-Channel |
| Detailed Description | N-Channel 650V 34A (Tc) 119W (Tc) Through Hole TO-247-3 |
| Current Continuous Drain Id25 C | 34A (Tc) |
| Vgs Max | ±20V |
| Input Capacitance Ciss Max Vds | 1000pF @ 400V |
| Gate Charge Qg Max Vgs | 24nC @ 10V |
| Drive Voltage Max Rds On Min Rds On | 10V |
| Drainto Source Voltage Vdss | 650V |