• info@zenkaeurope.com
  • English
    English
    Deutsch
    Français
    Español
    Italiano
    中文
    हिन्दी
    Lietuviškai
Product Image
TP65H050WS

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number TP65H050WS
Manufacturer Transphorm
Description 650 V 34 A CASCODE GAN FET
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Vgs Max ±20V
F E T Type N-Channel
Technology GaNFET (Gallium Nitride)
Vgsth Max Id 4.8V @ 700µA
Package Case TO-247-3
Mounting Type Through Hole
Rds On Max Id Vgs 60 mOhm @ 22A, 10V
Gate Charge Qg Max Vgs 24nC @ 10V
Detailed Description 328249
Power Dissipation Max 119W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package TO-247-3
Drainto Source Voltage Vdss 650V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 1000pF @ 400V
Current Continuous Drain Id25 C 34A (Tc)
Moisture Sensitivity Level M S L 3 (168 Hours)
Drive Voltage Max Rds On Min Rds On 10V

REQUEST A QUOTE


Contact Us

We're here round-the-clock for inquiries, partnership opportunities, or any assistance you need.

Contact Us