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TP65H035WS

Images are for reference only. See Product Specifications for product details.

Product Details

Part Number TP65H035WS
Manufacturer Transphorm
Description 650 V 46.5 CASCODE GAN FET
Datasheet View Datasheet
Category Discrete Semiconductor Products
Subcategory Transistors - FETs, MOSFETs - Single
Vgs Max ±20V
F E T Type N-Channel
Technology GaNFET (Gallium Nitride)
Vgsth Max Id 4.8V @ 700µA
Package Case TO-247-3
Mounting Type Through Hole
Rds On Max Id Vgs 41 mOhm @ 30A, 8V
Gate Charge Qg Max Vgs 36nC @ 8V
Detailed Description 354291
Power Dissipation Max 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package TO-247-3
Drainto Source Voltage Vdss 650V
Lead Free Status Ro H S Status Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds 1500pF @ 400V
Current Continuous Drain Id25 C 46.5A (Tc)
Moisture Sensitivity Level M S L 3 (168 Hours)
Drive Voltage Max Rds On Min Rds On 8V

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