TK7J90E,S1E

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Part Number	TK7J90E,S1E
Manufacturer	Toshiba Semiconductor and Storage
Description	MOSFET N-CH 900V TO-3PN
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Series	π-MOSVIII
Vgs Max	±30V
F E T Type	N-Channel
Packaging	Tube
Other Names	TK7J90E,S1E(S TK7J90ES1E
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	4V @ 700µA
Package Case	TO-3P-3, SC-65-3
Mounting Type	Through Hole
Rds On Max Id Vgs	2 Ohm @ 3.5A, 10V
Gate Charge Qg Max Vgs	32nC @ 10V
Detailed Description	326193
Power Dissipation Max	200W (Tc)
Operating Temperature	150°C (TJ)
Supplier Device Package	TO-3P(N)
Drainto Source Voltage Vdss	900V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	1350pF @ 25V
Current Continuous Drain Id25 C	7A (Ta)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	10V

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