Name: TK39J60W,S1VQ
Brand: Toshiba Semiconductor and Storage
SKU: TK39J60W,S1VQ
Rating: 5 (460 reviews)

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Part Number	TK39J60W,S1VQ
Manufacturer	Toshiba Semiconductor and Storage
Description	MOSFET N-CH 600V 38.8A TO-3P
Datasheet	View Datasheet
Category	Discrete Semiconductor Products
Subcategory	Transistors - FETs, MOSFETs - Single
Series	DTMOSIV
Vgs Max	±30V
F E T Type	N-Channel
Packaging	Tube
F E T Feature	Super Junction
Other Names	TK39J60W,S1VQ(O TK39J60WS1VQ
Technology	MOSFET (Metal Oxide)
Vgsth Max Id	3.7V @ 1.9mA
Package Case	TO-3P-3, SC-65-3
Mounting Type	Through Hole
Rds On Max Id Vgs	65 mOhm @ 19.4A, 10V
Gate Charge Qg Max Vgs	110nC @ 10V
Detailed Description	N-Channel 600V 38.8A (Ta) 270W (Tc) Through Hole TO-3P(N)
Power Dissipation Max	270W (Tc)
Operating Temperature	150°C (TJ)
Supplier Device Package	TO-3P(N)
Drainto Source Voltage Vdss	600V
Lead Free Status Ro H S Status	Lead free / RoHS Compliant
Input Capacitance Ciss Max Vds	4100pF @ 300V
Current Continuous Drain Id25 C	38.8A (Ta)
Moisture Sensitivity Level M S L	1 (Unlimited)
Drive Voltage Max Rds On Min Rds On	10V

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