TK35E08N1,S1X
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | TK35E08N1,S1X |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | MOSFET N-CH 80V 55A TO-220 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | U-MOSVIII-H |
| Vgs Max | ±20V |
| F E T Type | N-Channel |
| Packaging | Tube |
| Other Names | TK35E08N1,S1X(S TK35E08N1S1X |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 4V @ 300µA |
| Package Case | TO-220-3 |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 12.2 mOhm @ 17.5A, 10V |
| Gate Charge Qg Max Vgs | 25nC @ 10V |
| Detailed Description | N-Channel 80V 55A (Tc) 72W (Tc) Through Hole TO-220 |
| Power Dissipation Max | 72W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Supplier Device Package | TO-220 |
| Drainto Source Voltage Vdss | 80V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 1700pF @ 40V |
| Current Continuous Drain Id25 C | 55A (Tc) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 10V |