TK1K2A60F,S4X
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | TK1K2A60F,S4X |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | PB-F POWER MOSFET TRANSISTOR TO- |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | U-MOSIX |
| Vgs Max | ±30V |
| F E T Type | N-Channel |
| Packaging | Tube |
| Other Names | TK1K2A60F,S4X(S TK1K2A60FS4X TK1K2A60FS4X(S |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 4V @ 630µA |
| Package Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 1.2 Ohm @ 3A, 10V |
| Gate Charge Qg Max Vgs | 21nC @ 10V |
| Detailed Description | N-Channel 600V 6A (Ta) 35W (Tc) Through Hole TO-220SIS |
| Power Dissipation Max | 35W (Tc) |
| Operating Temperature | 150°C |
| Supplier Device Package | TO-220SIS |
| Drainto Source Voltage Vdss | 600V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 740pF @ 300V |
| Current Continuous Drain Id25 C | 6A (Ta) |
| Moisture Sensitivity Level M S L | Not Applicable |
| Drive Voltage Max Rds On Min Rds On | 10V |