TK12V60W,LVQ
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | TK12V60W,LVQ |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | MOSFET N CH 600V 11.5A 5DFN |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | DTMOSIV |
| Vgs Max | ±30V |
| F E T Type | N-Channel |
| Packaging | Cut Tape (CT) |
| F E T Feature | Super Junction |
| Other Names | TK12V60WLVQCT |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 3.7V @ 600µA |
| Package Case | 4-VSFN Exposed Pad |
| Mounting Type | Surface Mount |
| Rds On Max Id Vgs | 300 mOhm @ 5.8A, 10V |
| Gate Charge Qg Max Vgs | 25nC @ 10V |
| Detailed Description | N-Channel 600V 11.5A (Ta) 104W (Tc) Surface Mount 4-DFN-EP (8x8) |
| Power Dissipation Max | 104W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Supplier Device Package | 4-DFN-EP (8x8) |
| Drainto Source Voltage Vdss | 600V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 890pF @ 300V |
| Current Continuous Drain Id25 C | 11.5A (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 10V |