TK12E80W,S1X
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Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | TK12E80W,S1X |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | MOSFET N-CH 800V 11.5A TO220 |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | DTMOSIV |
| Vgs Max | ±20V |
| F E T Type | N-Channel |
| Packaging | Tube |
| Other Names | TK12E80W,S1X(S TK12E80WS1X |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 4V @ 570µA |
| Package Case | TO-220-3 |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 450 mOhm @ 5.8A, 10V |
| Gate Charge Qg Max Vgs | 23nC @ 10V |
| Detailed Description | N-Channel 800V 11.5A (Ta) 165W (Tc) Through Hole TO-220 |
| Power Dissipation Max | 165W (Tc) |
| Operating Temperature | 150°C |
| Supplier Device Package | TO-220 |
| Drainto Source Voltage Vdss | 800V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 1400pF @ 300V |
| Current Continuous Drain Id25 C | 11.5A (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 10V |