TK10A80E,S4X
Images are for reference only. See Product Specifications for product details.
Invent, Innovate, Integrate
Images are for reference only. See Product Specifications for product details.
| Part Number | TK10A80E,S4X |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | MOSFET N-CH 800V TO220SIS |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | π-MOSVIII |
| Vgs Max | ±30V |
| F E T Type | N-Channel |
| Packaging | Tube |
| Other Names | TK10A80E,S4X(S TK10A80ES4X |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 4V @ 1mA |
| Package Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 1 Ohm @ 5A, 10V |
| Gate Charge Qg Max Vgs | 46nC @ 10V |
| Detailed Description | N-Channel 800V 10A (Ta) 50W (Tc) Through Hole TO-220SIS |
| Power Dissipation Max | 50W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Supplier Device Package | TO-220SIS |
| Drainto Source Voltage Vdss | 800V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 2000pF @ 25V |
| Current Continuous Drain Id25 C | 10A (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 10V |