TK100L60W,VQ
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Images are for reference only. See Product Specifications for product details.
| Part Number | TK100L60W,VQ |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | MOSFET N CH 600V 100A TO3P(L) |
| Datasheet | View Datasheet |
| Category | Discrete Semiconductor Products |
| Subcategory | Transistors - FETs, MOSFETs - Single |
| Series | DTMOSIV |
| Vgs Max | ±30V |
| F E T Type | N-Channel |
| Packaging | Tube |
| F E T Feature | Super Junction |
| Other Names | TK100L60W,VQ(O TK100L60WVQ |
| Technology | MOSFET (Metal Oxide) |
| Vgsth Max Id | 3.7V @ 5mA |
| Package Case | TO-3PL |
| Mounting Type | Through Hole |
| Rds On Max Id Vgs | 18 mOhm @ 50A, 10V |
| Gate Charge Qg Max Vgs | 360nC @ 10V |
| Detailed Description | N-Channel 600V 100A (Ta) 797W (Tc) Through Hole TO-3P(L) |
| Operating Temperature | 150°C (TJ) |
| Supplier Device Package | TO-3P(L) |
| Drainto Source Voltage Vdss | 600V |
| Lead Free Status Ro H S Status | Lead free / RoHS Compliant |
| Input Capacitance Ciss Max Vds | 15000pF @ 30V |
| Current Continuous Drain Id25 C | 100A (Ta) |
| Moisture Sensitivity Level M S L | 1 (Unlimited) |
| Drive Voltage Max Rds On Min Rds On | 10V |